دیتاشیت PSMN0R9-25YLDX
مشخصات دیتاشیت
| نام دیتاشیت |
PSMN0R9-25YLDX
|
| حجم فایل |
77.347
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
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Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Nexperia PSMN0R9-25YLDX
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
238W
-
Total Gate Charge (Qg@Vgs):
89.8nC@10V
-
Drain Source Voltage (Vdss):
25V
-
Input Capacitance (Ciss@Vds):
6721pF@12V
-
Continuous Drain Current (Id):
300A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.2V@1mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
0.85mΩ@10V,25A
-
Package:
SOT-669
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Manufacturer:
Nexperia
